An electric field is applied to a semiconductor. Let the number of charge carries be nand the average drift speed by v. If the temperature is increased,

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n will increase but v will decrease As we increase the temperature, additional electron‒hole pairs are created in a semiconductor. As a result, the number of charge carriers increases. Now, drift velocity ( vd) is given by vd =(-eEr)/m As the temperature increases, the relaxation time of charge carriers (T) decreases. As a result, vd decreases.

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